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GaN wafer

GaN wafer

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GaN wafer

GaN wafer is a type of substrate made from gallium nitride (GaN) material, which is commonly used in the semiconductor industry. It serves as a base for the growth of thin films, such as those used in the production of light-emitting diodes (LEDs) and high-power electronics.

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Product Description

Features & Benefits

  • High thermal conductivity
  • High electron mobility
  • High breakdown voltage
  • Wide bandgap
  • High optical transparency
  • Chemical and radiation resistance
  • High power efficiency and performance in electronic and optoelectronic devices
  • Superior heat dissipation capabilities in high-temperature applications
  • Reduced power loss due to low resistance and capacitance
  • High reliability and durability in harsh environments
  • Ability to operate at high frequencies
  • Compatibility with existing semiconductor fabrication processes

Markets & Applications

  • LED production: GaN is a key material used in the production of blue and green LEDs, as well as white LEDs when combined with phosphors.
  • High-power electronics: GaN-based transistors can handle high voltages and frequencies, making them ideal for power electronics such as inverters and converters.
  • RF/microwave devices: GaN-based devices can operate at high frequencies, making them useful in wireless communication systems.
  • Solar cells: GaN has been studied for use as a substrate in the production of high-efficiency solar cells.
Parameter Value
Crystal structure Hexagonal
Lattice constant 3.189 Å
Thermal expansion 5.6 x 10^-6 K^-1
Thermal conductivity 1.3 W/cm-K
Melting point 1700 °C
Bandgap 3.4 eV
Resistivity > 10^10 Ω-cm
Size Up to 6 inches in diameter
Surface finish Epi-ready or polished

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Alumina Ceramics Zirconia Ceramics Silicon Carbide Ceramics Aluminum Nitride Ceramics Boron Carbide Ceramics Boron Nitride Ceramics (BN) Pyrolytic Boron Nitride (PBN) Silicon Nitride (Si3N4) Ceramics Beryllium Oxide Ceramics Mullite Ceramics GaN Ceramics Graphite Quartz Tugnsten Carbide

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